#IGCT
Text
IGCT: Powering the Future of Electronics
IGCT (Integrated Gate Commutated Thyristors) is a powerful and versatile power semiconductor device widely utilized in the electronic components industry. With its exceptional performance, fast switching speed, and high current-carrying capability, IGCT has found extensive applications in power transmission, industrial drives, and power electronics.
Knowing more: smbom.com
2 notes
·
View notes
Text
A B3, bolsa de valores brasileira, que tem sede em São Paulo, retirou nesta terça-feira (30) as ações da Gol de seus índices. Com a medida, a companhia aérea, que acionou um tribunal nos Estados Unidos (EUA) para renegociar dívidas, foi excluída do cálculo de dez indicadores da bolsa de valores brasileira.
Os indicadores são os seguintes:
• Ibovespa;
• Índice Brasil Amplo (Ibra);
• Índice Brasil 100 (IBrX);
• Índice Carbono Eficiente (ICO2);
• Índice de Diversidade (IDVR);
• Índice de Governança Corporativa Trade (IGCT);
• Índice de Ações com Governança Corporativa Diferenciada (IGCX);
• Índice de Ações com Tag Along Diferenciado (ITAG);
• Índice Valor (IVBX);
• Índice Small Cap (SMLL).
Apesar da retirada dos índices, as ações da companhia aérea continuarão a ser vendidas na bolsa. Elas, no entanto, serão comercializadas sob o título de “Outras condições”.
Na segunda-feira (29), as ações da Gol caíram 33,61%, sendo cotadas a R$ 3,93. Nesta terça, os papéis recuaram 26,97%, para R$ 2,87. Segundo a B3, a companhia tinha perdido R$ 674 milhões de valor de mercado até ontem, passando a valer R$ 1,323 bilhão.
A empresa divulgou, também na segunda-feira, que encerrou 2023 com endividamento de R$ 20,17 bilhões. No último dia 25, a Gol entrou com pedido para acionar o mecanismo conhecido como Capítulo 11 no Tribunal de Falências dos Estados Unidos. O procedimento assemelha-se à recuperação judicial no Brasil, em que uma empresa renegocia débitos com os credores para evitar a falência, enquanto mantém as atividades.
A companhia busca financiamento de US$ 950 milhões. Conforme comunicado divulgado pela Gol, a operação no Brasil não será afetada e a empresa continuará trabalhando normalmente, com o pagamento dos salários dos empregados garantido.
*O texto foi atualizado às 19h208
Com informações da Agência Brasil
0 notes
Text
B3 retira Gol de índices após aérea entrar em recuperação judicial
A B3 (Bolsa de Valores) informou que irá excluir as ações da companhia aérea Gol de seus índices, incluindo o Ibovespa, em virtude do pedido de recuperação judicial da empresa nos Estados Unidos, “bem como das demais repercussões no mercado”.
“A Gol terá seus títulos excluídos dos índices IBOV, IBRA, IBXX, ICO2, IDVR, IGCT, IGCX, ITAG, IVBX e SMLL ao seu preço de fechamento após o encerramento do…
View On WordPress
0 notes
Text
Cooling in Power Electronics
Power electronics devices such as MOSFETs, GTOs, IGBTs, IGCTs etc. are now widely used to efficiently deliver electrical power in home electronics, industrial drives, telecommunication, transport, electric grid and numerous other applications.
ALN-PLATE
In power electronics, chip-on-heat-sink technology makes it possible to reduce thermal resistance between the heat source (chip) and the heat-sink by (depending on the design) up to a quarter of the value compared to conventional cooling system design.
Thus, ceramic heat-sinks make it possible to achieve power densities that were previously unattainable.
ceramic-heat-sinks
The best material of ceramic heat-sinks is aluminium nitride which thermal conductivity is above 170W/mk, below is the material properties.
If you have more questions, pls consult with us.
Properties
Value
Bulk Density(g/cm3)
>=3.3
Water Absorption
0
Flexural Strength(MPa)
>300
Vickers Hardness (Gpa)
11
Modulus Of Elasticity (Gpa)
>200
Dielectric Constant(1MHz)
8.8
Coefficient Linear Thermal Expansion
/℃，5℃/min, 20-300℃
4.6*10-6
Thermal Conductivity
30 degree Celsius
>=170
Volume Resistivity(Ω.cm)
20 degree Celsius
>1014
300 degree Celsius
109
500 degree Celsius
107
Dielectric Strength(KV/mm)
15-20
Remark: The value is just for review, different using conditions will have a little difference.
Read the full article
0 notes
Text
What is electrical frequency and why does it matter? - Arya College
An electric power system is specified by two main important parameters including voltage and frequency. To keep the expected operating conditions and supply energy to all the users (loads) connected, it is essential for the students of best engineering colleges in Jaipur to control these parameters within predefined limits, to avoid unexpected disturbances that can create problems to the connected loads or even fail the systems.
The most commonly used nominal frequency (Fn) in power systems is considered as 50 Hz and 60 Hz in some countries. The reasons for this choice are dependent on technical compromises and historical situations. Generally, when the system operates in a range of frequency Fn±0.1 Hz, it is in the standard conditions, while when the frequency ranges from 47.5 to 51.5 Hz, it is known as the emergency condition or restoration condition. These values differ as per each country.
Frequency differences in a power system occur because of an imbalance between generation and load. When the frequency value of a power system reaches the emergency condition, the control strategy get started. The frequency control is classifying in three basic levels including primary, secondary and tertiary controls. Each frequency control has particular features and purposes.
60Hz means the power waveform cycles 60 times per second, and 50Hz is described as the power will cycle 50 times per second. These two basic frequencies are the primary reason for frequency conversion. Before the 1900’s there were many frequencies produced across the globe utilizing Water and Steam Turbines ranging from 16Hz to 133Hz. However, initially in 1900’s, the electric power grids get standardized on 50Hz and 60Hz AC power. The origins and actual inventors have become a topic for conversation, but it is clear that Edison, Tesla and Westinghouse were all involved.
Presently, the Electric Utilities in some countries produce power at a frequency of 60Hz. This excludes some very old and still in operation Hydro Plants that produce power with at 25HZ. Most of the other countries across the globe produce power at a frequency of 50Hz.
How frequency converter works?
To change the frequency of ac current, frequency converter goes through two stage conversion by the students of top engineering colleges in Jaipur. First it converts ac to dc, then secondly dc to ac of required frequency. Thus, frequency converter has two sets of working including the rectifier circuit converts ac to dc and then inverter circuit with thyristors/ IGCTs / IGBTs converts dc to ac with desired frequency. The shifting and changing of frequency happen in the converter stage.
If voltage conversion is required, a transformer will be included in either the ac input or output circuitry and this transformer may offer galvanic isolation between the input and output ac circuits. Also, a battery may be added to the dc circuitry to improve the converter’s ride-through of brief outages in the input power.
Why do I need a frequency conversion?
Small components such as computers and small electronics operate with switch mode power supplies. These operate at both 50HZ and 60HZ and, the only item students of electrical engineering colleges in Jaipur may need is a plug converter as 50HZ outlets are not the same as 60HZ outlets. This is because both of them operate at different frequency and does not require plugging equipment into the wrong power source or run the risk of damaging equipment and or harming yourself. You cannot put it back, once you let the smoke out of the equipment.
Specific industry
Some particular industries have unique frequency requirements based on how they supply power to their equipment. While Aviation and some Weapons systems requires 400Hz. These systems internally create 400HZ power. Thus, a ground power unit, also called a GPU produces 400HZ , if an equipment is not operating and providing the internal 400HZ. Considering this, electrical systems used on the ground required the Ground power support.
On the other hand, 400Hz is used in different airport and military radar applications. Rail utilize 25, 91.66 or 100Hz to run their signal systems while Ship yards and boat docks require frequency conversion for shore power. Therefore, a frequency converter is required by the electrical system to match the power. There are different variable frequencies needed in laboratories and testing facilities.
What are the types of frequency conversion?
For students of private engineering colleges in Jaipur, some applications are better suited for Rotary Frequency Conversion. It is also called Motor Generator Sets or Rotary Converters. While others may be more suitable for Static Frequency Conversion (also called Solid State Converters). Each type offers its benefits and shortcomings. Thus, some companies will build both types of equipment. It allows the customers to select what they need.
Experts of engineering colleges uses a generator called Rotary Frequency Converter to produce a true output sine wave at the desired frequency much like the power companies. A Static Frequency Converter further uses a double conversion process with a rectifier that changes the AC input to DC. Later, the inverter converts it back to an AC output. And lastly, wave shapes the frequency resulted in a re-created sine wave. The resulting frequency and/or voltage conversion from any type of unit is suitable for most applications. Price, serviceability, design life, size, and noise are the deciding factors when purchasing a Frequency Converter system.
0 notes
Text
0 notes
Text
Summary of commonly used power semiconductor devices|E-energy
Summary of commonly used power semiconductor devices
1.MCT(MOS Controlled Thyristor)
MCT is a new MOS and bipolar composite device. As shown in the figure above, MCT is a high impedance MOSFET, low drive figure MCT power, fast switching speed characteristics and SCR high voltage, high current characteristics combined together to form a high power, high voltage, fast full control type devices. In essence, MCT is a MOS gate-controlled SCR, which can be turned on or off by adding a narrow pulse to the gate, and it consists of numerous single cells in parallel.
2.IGCT (Integrated Gate Commutated Thyristors)
IGCT is a new type of device developed by combining IGBT and GTO technologies on the basis of SCR technology, which is suitable for high-voltage and large-capacity inverter systems, and is a new type of power semiconductor device used in giant power electronics packages.
IGCT is a GTO chip integrated with anti-parallel diode and gate driver circuit, and then connected with its gate driver in a low inductance way at the periphery, combining the advantages of stable turn-off capability of transistor and low pass-state loss of SCR. The SCR's performance is utilized in the on-state phase and the transistor's characteristics are presented in the off-state phase.
3.IEGT (Injection Enhanced Gate Transistor)
IEGT is an IGBT series power electronic device with withstand voltage of 4kV or more, which has made a leap forward in the development of large-capacity power electronic devices by adopting the structure of enhanced injection to achieve low pass-state voltage. It has the characteristics of low loss, high speed operation, high voltage withstand, active gate drive intelligence, etc., as well as the use of trench structure and multi-chip parallel connection and self-equalizing current characteristics, so it has the potential to further expand the current capacity. In addition, many derivatives are available in modular packages, which are expected in large and medium capacity converter applications.
4.IPEM (Integrated Power Elactronics Modules)
IPEM is a module that integrates many devices of power electronics devices together. It starts with the semiconductor devices MOSFET, IGBT or MCT and diode chips packaged together to form a building block unit, and then these building block units are iterated onto an open-hole, high conductivity insulating ceramic substrate, under which are copper substrates, beryllium oxide ceramic and heat sinks in turn. IPEM realizes the intelligence and modularity of power electronics technology, greatly reduces circuit wiring inductance, system noise and parasitic oscillation, and improves system efficiency and reliability.
5.PEBB (Power Electric Building Block)
A typical PEBB (Power Electric Building Block) is an integrated device or module that can handle electrical energy developed on the basis of IPEM, which is not a specific semiconductor device, but an integration of different devices and technologies designed according to the optimal circuit structure and system structure.
A typical PEBB is shown in the figure above. Although it looks like a power semiconductor module, a PEBB includes not only power semiconductor devices, but also gate drive circuits, level translation, sensors, protection circuits, power supplies and passive devices. Through these two interfaces, several PEBBs can form power electronic systems. These systems can be as simple as a small DC-DC converter or as complex as a large distributed power system. The number of PEBBs in a system can range from one to any number. Multiple PEBB modules working together can perform system-level functions such as voltage conversion, energy storage and conversion, and cathodic resistance matching, etc. The most important feature of PEBB is its versatility.
6. Super Power SCR
Since the introduction of SCR, its power capacity has increased by nearly 3000 times. Now many countries have been able to produce 8kV/4kA SCRs stably. 8kV/4kA and 6kV/6kA light-triggered SCRs (LTT) are now in production in Japan. The United States and Europe mainly produce electrically triggered SCR. recent decade, due to the rapid development of self-closing devices, SCR applications have shrunk, but, due to its high voltage, high current characteristics, it still occupies a very important position in HVDC, static reactive power compensation (SVC), high-power DC power supply and ultra-high-power and high-voltage variable frequency speed control applications. It is expected that in the next few years, SCR will continue to develop in high-voltage, high-current applications.
7. Pulse power closure switch SCR
This device is particularly suitable for the transmission of very strong peak power (several MW), very short duration (several ns) discharge closure switch applications, such as: lasers, high-intensity lighting, discharge ignition, electromagnetic transmitters and radar modulators. The device can be opened quickly at a high voltage of several kV, does not require discharge electrodes, has a long service life, small size, relatively low price, and is expected to replace the current application of high-voltage ion gate, ignition tube, spark gap switch or vacuum switch.
8. New GTO devices - integrated gate commutation SCR
Currently there are two conventional GTO alternatives: high-power IGBT modules, new GTO-derived devices - integrated gate commutation IGCTSCR. IGCTSCR is a new high-power devices, compared with conventional GTOSCR, it has many excellent characteristics, such as, without buffer circuit to achieve reliable shutdown, short storage time, high turn-on capability, turn-off gate charge and The application system (including all devices and peripheral components such as anode reactors and buffer capacitors, etc.) has low total power loss, etc.
9. IGBT (Trench IGBT) modules
The IGBT cells in today's high-power IGBT modules usually use trench gate structure IGBTs, which are usually processed with 1μm accuracy compared to flat gate structure, thus greatly improving cell density. The presence of gate trench eliminates the junction-type field effect transistor effect between adjacent cells in planar gate devices, and introduces a certain electron injection effect, which makes the on-state resistance decrease. The conditions are created for increasing the thickness of the long base region and improving the device withstand voltage. Therefore, the high-voltage and high-current IGBT devices that have emerged in recent years all adopt this structure.
10.IEGT (Injection Enhanced Gate Trangistor)
In recent years, Toshiba of Japan has developed IEGT, which, like IGBT, is also divided into two structures: planar gate and trench gate, with the former product coming out soon and the latter still under development. 2 orders of magnitude lower) and higher operating frequency. In addition, the device adopts a flat crimped electrode lead structure, which can be expected to have high reliability.
11.MOS Gated SCR
MOS gate-controlled SCR makes full use of the good pass-state characteristics of SCR, excellent turn-on and turn-off characteristics, and is expected to have excellent self-shutdown dynamic characteristics, very low pass-state voltage drop and high voltage resistance, becoming a promising high-voltage high power device for future development in power devices and power systems. There are three main MOS gated SCR structures: MCT, BRT, and EST, of which EST is probably the most promising structure in MOS. However, it will take quite a long time for this device to really become a commercial and practical device and reach the level of replacing GTO.
12.GaAs diode
With the increasing frequency of converter switching, the requirements for fast recovery diodes have also increased. It is known to have superior high-frequency switching characteristics than silicon diodes, but due to process technology and other reasons, GaAs diodes have a lower withstand voltage, the practical application is limited. To meet the needs of high-voltage, high-speed, high-efficiency and low-EMI applications, high-voltage GaAs high-frequency rectifier diodes have been successfully developed at Motorola. Compared with silicon fast recovery diodes, the significant features of this new diode are: small reverse leakage current change with temperature, low switching losses, and good reverse recovery characteristics.
13.SiC power devices
In the power devices made of new semiconductor materials, the most promising is the SiC power devices. Its performance index is an order of magnitude higher than GaAs devices. Compared with other semiconductor materials, SiC has the following excellent physical characteristics: high band width, high saturation electron drift rate, high breakdown strength, low dielectric constant and high thermal conductivity. These excellent physical properties make SiC an ideal semiconductor material for high temperature, high frequency, and high power applications. Under the same withstand voltage and current conditions, the drift region resistance of SiC devices is 200 times lower than that of silicon, and even the on-state voltage drop of high withstand voltage SiC field-effect tubes is much lower than that of unipolar and bipolar silicon devices. Moreover, the switching time of SiC devices can reach the order of 10nS and has a very superior FBSOA.
Prepare your supply chain
Buyers of electronic components must now be prepared for future prices, extended delivery time, and continuous challenge of the supply chain. Looking forward to the future, if the price and delivery time continues to increase, the procurement of JIT may become increasingly inevitable. On the contrary, buyers may need to adopt the "just in case" business model, holding excess inventory and finished products to prevent the long -term preparation period and the supply chain interruption.
As the shortage and the interruption of the supply chain continue, communication with customers and suppliers will be essential. Regular communication with suppliers will help buyers prepare for extension of delivery time, and always understand the changing market conditions at any time. Regular communication with customers will help customers manage the expectations of potential delays, rising prices and increased delivery time. This is essential to ease the impact of this news or at least ensure that customers will not be taken attention to the sudden changes in this chaotic market.
Most importantly, buyers of electronic components must take measures to expand and improve their supplier network. In this era, managing your supply chain requires every link to work as a cohesive unit. The distributor of the agent rather than a partner cannot withstand the storm of this market. Communication and transparency are essential for management and planning. In E-energy Holding Limited, we use the following ways to hedge these market conditions for customers:
Our supplier network has been reviewed and improved for more than ten years.
Our strategic location around the world enables us to access and review the company's headquarters before making a purchase decision.
E-energy Holding Limited cooperates with a well -represented testing agency to conduct in -depth inspections and tests before delivering parts to our customers.
Our procurement is concentrated in franchise and manufacturer direct sales.
Our customer manager is committed to providing the highest level of services, communication and transparency. In addition to simply receiving orders, your customer manager will also help you develop solutions, planned inventory and delivery plans, maintain the inventory level of regular procurement, and ensure the authenticity of your parts.
Add E-energy Holding Limited to the list of suppliers approved by you, and let our team help you make strategic and wise procurement decisions.
0 notes
Text
Integrated Gate Commutated Thyristor Market
An integrated gate commutated thyristor (IGCT) is a gate-controlled turn-off switch, which performs similar to a thyristor with lowest conduction losses. IGCT is a power semiconductor, which can be used for medium to high-voltage applications ranging from 0.5 MVA up to several 100 MVA. IGCT enables a robust series connection between high power turn-off devices used for high power applications.
Read Sample Report by Allied Market Research: https://bit.ly/30AwBn2
Benefits such as better performance of IGCT at higher temperature, (temperature ranges from -40 to 125 C) support the growth of the market. IGCT is used in industrial appliances and steel mills for controlling high power AC motors, and AC grid interface, as well as the PWM switching. Therefore, this feature adds value to drive the demand for the IGCT market.
1 note
·
View note
Photo
Greater Bridgeport Transit 2017 New Flyer XDE40 "Xcelsior" Hybrid 4701 on the 8. #connecticut #Bridgeport #bridgeportct #gbt #greaterbridgeporttransit #downtown #downtownbridgeport #newflyer #newflyerindustries #bus #transit #transportation #ig_connecticut #igct #ig_ct #tristate #tristatearea #publictransit #masstransit #PublicTransport #canon #canon7dmarkii #hybrid #hybridbus (at Bridgeport Bus Terminal) https://www.instagram.com/caitsith810/p/BwOyAPBHH4r/?utm_source=ig_tumblr_share&igshid=kwosaptz9gd7
#connecticut#bridgeport#bridgeportct#gbt#greaterbridgeporttransit#downtown#downtownbridgeport#newflyer#newflyerindustries#bus#transit#transportation#ig_connecticut#igct#ig_ct#tristate#tristatearea#publictransit#masstransit#publictransport#canon#canon7dmarkii#hybrid#hybridbus
1 note
·
View note
Link
An integrated gate commutated thyristor (IGCT) is a gate-controlled turn-off switch, which performs similar to a thyristor with lowest conduction losses. IGCT is a power semiconductor, which can be used for medium to high-voltage applications ranging from 0.5 MVA up to several 100 MVA. IGCT enables a robust series connection between high power turn-off devices used for high power applications.
0 notes
Link
Find here IGT LPG Regulators, Liquefied Petroleum Gas Regulators companies, suppliers & exporters in India. Get touch items & location of businesses producing and supplying LPG Regulators, Liquefied Petroleum Gas Regulators over India.
1 note
·
View note
Text
2017-2022 Global IGCT Market Analysis : ABB, Infineon technologies, Mitsubishi Electric, ON Semiconductor
2017-2022 Global IGCT Market Analysis : ABB, Infineon technologies, Mitsubishi Electric, ON Semiconductor
Worldwide IGCT Market 2017presents a widespread and fundamental study of IGCT industry along with the analysis of subjective aspects which will provide key business insights to the readers. Global IGCT Market 2017 research report offers the analytical view of the industry by studying different factors like IGCT market growth, consumption volume, market trends and IGCT industry cost structures…
View On WordPress
0 notes
Photo
#Repost @rmckeefery with @repostapp ・・・ Hear from John Welbourn, CEO- Power Athlete on #IGCT. Please be sure to thank our podcast sponsors by following them on Facebook (GymAware, Intek Strength, Iron Grip Barbell Company, PLAE, Samson Equipment INC., Sorinex Exercise Equipment, TrainHeroic, VersaPulley MV2 FlyWheel Training Technology, Woodway Treadmills), Twitter (@GymAware, @IntekStrength, @Iron_Grip, @Plae_us, @SAMSON_EQ, @Sorinex, @trainheroic, @VersaPulley, @WoodwayTreadmil), and Instagram (@gymaware, @intekstrength, @irongripbarbellcompany, @PLAE_US, @samson_eq, @SORINEX, @trainheroic, @versapulley, @woodwaytreadmills) http://ronmckeefery.com/206/
0 notes
Text
Power Semiconductor Devices
Semiconductor Devices
• Diodes
• Thyristors
• BJTs
• MOSFETs
• GTOs
• IJBT
• Can be categorised into three groups:
– Uncontrolled: Diode
– Semi-controlled: Thyristor (SCR)
– Fully controlled: Power transistors: e.g. BJT, MOSFET, IGBT,
GTO, IGCT
Power Semiconductor Devices
Diodes
I
V
Practical Diode
a c
Ideal Diode
I
V
Vo
1/R
i
b
1/R
V
o
V
o
o
R
i
R
a c
V
b
Stud
“Hockey-puck”
• Line frequency…
View On WordPress
0 notes
Text
Power Semiconductor Devices
Semiconductor Devices
• Diodes
• Thyristors
• BJTs
• MOSFETs
• GTOs
• IJBT
• Can be categorised into three groups:
– Uncontrolled: Diode
– Semi-controlled: Thyristor (SCR)
– Fully controlled: Power transistors: e.g. BJT, MOSFET, IGBT,
GTO, IGCT
Power Semiconductor Devices
Diodes
I
V
Practical Diode
a c
Ideal Diode
I
V
Vo
1/R
i
b
1/R
V
o
V
o
o
R
i
R
a c
V
b
Stud
“Hockey-puck”
• Line frequency…
View On WordPress
0 notes
Text
Power Semiconductor Devices
Semiconductor Devices
• Diodes
• Thyristors
• BJTs
• MOSFETs
• GTOs
• IJBT
• Can be categorised into three groups:
– Uncontrolled: Diode
– Semi-controlled: Thyristor (SCR)
– Fully controlled: Power transistors: e.g. BJT, MOSFET, IGBT,
GTO, IGCT
Power Semiconductor Devices
Diodes
I
V
Practical Diode
a c
Ideal Diode
I
V
Vo
1/R
i
b
1/R
V
o
V
o
o
R
i
R
a c
V
b
Stud
“Hockey-puck”
• Line frequency…
View On WordPress
0 notes
Last Seen Blogs
starofdavestrider
Woah! Dave Strider joins Jumblr ✡️
trnprnce
CURVE BALL !
mouse5379
mouse5379
superpoggy000
It me
tinydancern3934
kawaii, hawaje